| Customization: | Available |
|---|---|
| Type: | Alloy Target |
| Shape: | Round |
Suppliers with verified business licenses
High-purity tungsten targets, high-purity tungsten-titanium alloy targets, and tungsten-silicon composite targets are usually applied by magnetron sputtering to produce various complex and high-performance thin film materials. Because high-purity tungsten or ultra-pure tungsten (5 N or 6 N) has high resistance to electron migration, high temperature stability, and the ability to form stable silicides, it is often used as a thin film in the electronics industry as a gate, connection, transition and Barrier metal. Ultra-high-purity tungsten and its silicides are also used in ultra-large-scale integrated circuits as resistance layers, diffusion barriers, etc., and as gate materials and connection materials in metal oxide semiconductor transistors. Tungsten-titanium alloy sputtering targets are often used to make transition metal layers of thin-film solar cells.
Specification:
|
Name |
Molecular formula | Specification |
Size |
Relative density | Grain size | Defect rate | |
| Tungsten target |
W |
4N(99.99%) |
Inch |
mm |
≥99% |
≯50µm |
0 |
|
5N(99.999%) |
D(2,3,4,6,8,10,12) H(0.25,0.5,0.75) |
Diameter :
50~350
Thickness:
6~25
|
|||||
| Tungsten Titanium Target |
WTi10 WTi20 |
4N(99.99%) |
≥99% |
≯50µm |
0 |
||
|
4N5(99.995%) |
|||||||
Chemical component
|
Specification grade Chemical index |
W/(W+Ti)≥99.99% |
W/(W+Ti)≥99.995% |
W≥99.999% |
|||||||||
| Total trace impurities |
≯100 ppm |
≯50 ppm |
≯10 ppm |
|||||||||
|
Impurity index(ppm) |
Max |
Typical value | Max | Typical value | Max | Typical value | ||||||
|
Radioactive elements |
U |
- |
0.2 |
0.1 |
0.05 |
0.0008 |
0.0005 |
|||||
|
Th |
- |
0.2 |
0.1 |
0.05 |
0.0008 |
0.0005 |
||||||
|
Alkali metal elements |
Li |
1 |
0.05 |
0.02 |
0.01 |
0.01 |
0.003 |
|||||
|
Na |
5 |
1 |
0.5 |
0.2 |
0.1 |
0.05 |
||||||
|
K |
5 |
1 |
0.1 |
0.05 |
0.05 |
0.03 |
||||||
|
Mo,Re |
10 |
5 |
10 |
5 |
1 |
0.5 |
||||||
|
Fe,Cr |
10 |
5 |
5 |
3 |
0.5 |
0.3 |
||||||
|
Ca,Si,Cu,Ni,Al,Zn,Sn,Mn,Co,Hg,V |
2 |
1 |
0.5 |
0.3 |
0.2 |
0.2 |
||||||
|
P,As,Se |
2 |
1 |
0.5 |
0.2 |
0.2 |
0.2 |
||||||
|
B,Pb,Sb,Be,Ba,Bi,Cd,Ge,Nb,Pt,Mg,Zr,Au,In,Ga,Ag |
1 |
0.5 |
0.5 |
0.1 |
0.1 |
0.1 |
||||||
| All other individual elements |
1 |
0.5 |
0.5 |
0.1 |
0.1 |
0.1 |
||||||
|
Gas analysis (≯,ppm) |
O |
C |
N |
H |
S |
|||||||
|
30 |
20 |
20 |
20 |
10 |
||||||||
Depending on the purpose of use, there are different requirements for the impurity content of high-purity tungsten targets and tungsten-titanium targets. Generally, the chemical purity is required to be between 99.99% and 99.999%. We can also customize other specifications suitable for the application according to user requirements.
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