Customization: | Available |
---|---|
Type: | Alloy Target |
Shape: | Round/Square |
Suppliers with verified business licenses
[Application]
High purity tungsten target, high purity tungsten titanium alloy target and tungsten silicon composite target are usually fabricated by magnetron sputtering. Because of its high resistance to electron transfer, high temperature stability, and ability to form stable silicides, high purity tungsten or ultrapure tungsten (5 N or 6 N) is often used in the electronics industry in the form of thin films as gate, junction, transition, and barrier metals. Ultra-high purity tungsten and its silicides are also used in vlsi as resistance layer, diffusion barrier layer, gate material and connection material in MOS transistors. Tungsten and titanium alloy sputtering targets are often used to make the transition metal layer of thin-film solar cells.
[Specification]
Name |
Molecular formula | Specification |
Size |
Relative density | Grain size | Defect rate | |
Tungsten target |
W |
4N(99.99%) |
Inch |
mm |
≥99% |
≯50µm |
0 |
5N(99.999%) |
D(2,3,4,6,8,10,12)
H(0.25,0.5,0.75) |
Diameter :
50~350
Thickness:
6~25
|
|||||
Tungsten Titanium Target |
WTi10 WTi20 |
4N(99.99%) |
≥99% |
≯50µm |
0 |
||
4N5(99.995%) |