High-purity tungsten targets, high-purity tungsten-titanium alloy targets, and tungsten-silicon composite targets are usually applied by magnetron sputtering to produce various complex and high-performance thin film materials. Because high-purity tungsten or ultra-pure tungsten (5 N or 6 N) has high resistance to electron migration, high temperature stability, and the ability to form stable silicides, it is often used as a thin film in the electronics industry as a gate, connection, transition and Barrier metal.
Ultra-high-purity tungsten and its silicides are also used in ultra-large-scale integrated circuits as resistance layers, diffusion barriers, etc., and as gate materials and connection materials in metal oxide semiconductor transistors.
Tungsten-titanium alloy sputtering targets are often used to make transition metal layers of thin-film solar cells.
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